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Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl~3 Annealing
Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl~3 Annealing
Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl~3 Annealing
Yano, H. (Autor:in) / Araoka, T. (Autor:in) / Hatayama, T. (Autor:in) / Fuyuki, T. (Autor:in) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.
01.01.2013
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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