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Improved MOS Interface Properties of C-Face 4H-SiC by POCl~3 Annealing
Improved MOS Interface Properties of C-Face 4H-SiC by POCl~3 Annealing
Improved MOS Interface Properties of C-Face 4H-SiC by POCl~3 Annealing
Kotake, S. (Autor:in) / Yano, H. (Autor:in) / Okamoto, D. (Autor:in) / Hatayama, T. (Autor:in) / Fuyuki, T. (Autor:in) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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