Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4^o off-axis substrates: Fid-Bau Portal

Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4^o off-axis substrates

Dong, L. / Sun, G. / Yu, J. / Zheng, L. / Liu, X. / Zhang, F. / Yan, G. / Li, X. / Wang, Z.

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Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4^o off-axis substrates

Dong, L. / Sun, G. / Yu, J. / Zheng, L. / Liu, X. / Zhang, F. / Yan, G. / Li, X. / Wang, Z.

Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4^o off-axis substrates

Dong, L. / Sun, G. / Yu, J. / Zheng, L. / Liu, X. / Zhang, F. / Yan, G. / Li, X. / Wang, Z.

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Title:

Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4^o off-axis substrates

Contributors:

Dong, L. (author) / Sun, G. (author) / Yu, J. (author) / Zheng, L. (author) / Liu, X. (author) / Zhang, F. (author) / Yan, G. (author) / Li, X. (author) / Wang, Z. (author)

Published in:

APPLIED SURFACE SCIENCE ; 270 ; 301-306

Publication date:

2013-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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