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Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
Skacelova, D. (Autor:in) / Danilov, V. (Autor:in) / Schafer, J. (Autor:in) / Quade, A. (Autor:in) / Stahel, P. (Autor:in) / Cernak, M. (Autor:in) / Meichsner, J. (Autor:in)
01.01.2013
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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