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Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
Skacelova, D. (author) / Danilov, V. (author) / Schafer, J. (author) / Quade, A. (author) / Stahel, P. (author) / Cernak, M. (author) / Meichsner, J. (author)
2013-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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