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Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Ham, Y. H. (Autor:in) / Shutov, D. A. (Autor:in) / Kwon, K. H. (Autor:in)
APPLIED SURFACE SCIENCE ; 273 ; 287-292
01.01.2013
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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