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A platform for research: civil engineering, architecture and urbanism
Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Ham, Y. H. (author) / Shutov, D. A. (author) / Kwon, K. H. (author)
APPLIED SURFACE SCIENCE ; 273 ; 287-292
2013-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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