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Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Ham, Yong-Hyun (Autor:in) / Shutov, Dmitriy Alexandrovich (Autor:in) / Kwon, Kwang-Ho (Autor:in)
Applied surface science ; 273 ; 287-292
01.01.2013
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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