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Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes
Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes
Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes
Korucu, D. (Autor:in) / Turut, A. (Autor:in) / Turan, R. (Autor:in) / Altindal, S. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 344-351
01.01.2013
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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