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Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature
Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature
Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature
Shah, S. (Autor:in) / Ghosh, K. (Autor:in) / Jejurikar, S. (Autor:in) / Mishra, A. (Autor:in) / Chakrabarti, S. (Autor:in)
MATERIALS RESEARCH BULLETIN ; 48 ; 2933-2939
01.01.2013
7 pages
Aufsatz (Zeitschrift)
Englisch
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