The Effect of Dopant Dose Loss During Annealing on Heavily Doped Surface Layers Obtained by Recoil Implantation of Antimony in Silicon: Fid-Bau Portal

The Effect of Dopant Dose Loss During Annealing on Heavily Doped Surface Layers Obtained by Recoil Implantation of Antimony in Silicon

Mesli, M.N. / Benbahi, B. / Bouafia, H. / Belmekki, M. / Abidri, B. / Hiadsi, S.

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The Effect of Dopant Dose Loss During Annealing on Heavily Doped Surface Layers Obtained by Recoil Implantation of Antimony in Silicon

Mesli, M.N. / Benbahi, B. / Bouafia, H. / Belmekki, M. / Abidri, B. / Hiadsi, S.

The Effect of Dopant Dose Loss During Annealing on Heavily Doped Surface Layers Obtained by Recoil Implantation of Antimony in Silicon

Mesli, M.N. / Benbahi, B. / Bouafia, H. / Belmekki, M. / Abidri, B. / Hiadsi, S.

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Titel:

The Effect of Dopant Dose Loss During Annealing on Heavily Doped Surface Layers Obtained by Recoil Implantation of Antimony in Silicon

Beteiligte:

Mesli, M.N. (Autor:in) / Benbahi, B. (Autor:in) / Bouafia, H. (Autor:in) / Belmekki, M. (Autor:in) / Abidri, B. (Autor:in) / Hiadsi, S. (Autor:in)

Erschienen in:

SURFACE REVIEW AND LETTERS ; 20 ; 1350038

Erscheinungsdatum:

01.01.2013

Format / Umfang:

1350038 pages

ISSN:

0218-625X

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 530.417

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Kaiblinger-Grujin, G. / Kosina, H. / Koepf, C. et al. | British Library Online Contents | 1997

Atomistic modeling of dopant implantation and annealing in Si: damage evolution, dopant diffusion and activation

Pelaz, L. / Marqués, L. A. / Aboy, M. et al. | British Library Online Contents | 2005

Annealing behavior of phosphorus in native oxide films on heavily phosphorus doped silicon

Ying, W. B. / Mizokawa, Y. / Yu, Y. B. et al. | British Library Online Contents | 1996

Annealing behavior of phosphorus in native oxide films on heavily phosphorus doped silicon

Ying, W. B. / Mizokawa, Y. / Yu, Y. B. et al. | British Library Online Contents | 1996

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