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The Effect of Dopant Dose Loss During Annealing on Heavily Doped Surface Layers Obtained by Recoil Implantation of Antimony in Silicon
The Effect of Dopant Dose Loss During Annealing on Heavily Doped Surface Layers Obtained by Recoil Implantation of Antimony in Silicon
The Effect of Dopant Dose Loss During Annealing on Heavily Doped Surface Layers Obtained by Recoil Implantation of Antimony in Silicon
Mesli, M.N. (author) / Benbahi, B. (author) / Bouafia, H. (author) / Belmekki, M. (author) / Abidri, B. (author) / Hiadsi, S. (author)
SURFACE REVIEW AND LETTERS ; 20 ; 1350038
2013-01-01
1350038 pages
Article (Journal)
English
DDC:
530.417
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