Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy: Fid-Bau Portal

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy

Iwamoto, N. / Onoda, S. / Fujita, N. / Makino, T. / Ohshima, T.

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Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy

Iwamoto, N. / Onoda, S. / Fujita, N. / Makino, T. / Ohshima, T.

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy

Iwamoto, N. / Onoda, S. / Fujita, N. / Makino, T. / Ohshima, T.

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Titel:

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy

Beteiligte:

Iwamoto, N. (Autor:in) / Onoda, S. (Autor:in) / Fujita, N. (Autor:in) / Makino, T. (Autor:in) / Ohshima, T. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.

Erschienen in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 289-292

MATERIALS SCIENCE FORUM ; 778/780

Erscheinungsdatum:

01.01.2014

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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