Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy: Fid-Bau Portal

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Sugawara, Y. / Yao, Y.Z. / Ishikawa, Y. / Danno, K. / Suzuki, H. / Bessho, T. / Yamaguchi, S. / Nishikawa, K. / Ikuhara, Y.

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Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Sugawara, Y. / Yao, Y.Z. / Ishikawa, Y. / Danno, K. / Suzuki, H. / Bessho, T. / Yamaguchi, S. / Nishikawa, K. / Ikuhara, Y.

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Sugawara, Y. / Yao, Y.Z. / Ishikawa, Y. / Danno, K. / Suzuki, H. / Bessho, T. / Yamaguchi, S. / Nishikawa, K. / Ikuhara, Y.

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Titel:

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

Beteiligte:

Sugawara, Y. (Autor:in) / Yao, Y.Z. (Autor:in) / Ishikawa, Y. (Autor:in) / Danno, K. (Autor:in) / Suzuki, H. (Autor:in) / Bessho, T. (Autor:in) / Yamaguchi, S. (Autor:in) / Nishikawa, K. (Autor:in) / Ikuhara, Y. (Autor:in) / Okumura, H.

Erschienen in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 366-369

MATERIALS SCIENCE FORUM ; 778/780

Erscheinungsdatum:

01.01.2014

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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