Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography: Fid-Bau Portal

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. / Momose, K. / Sato, T. / Kitabatake, M.

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Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. / Momose, K. / Sato, T. / Kitabatake, M.

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. / Momose, K. / Sato, T. / Kitabatake, M.

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Titel:

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Beteiligte:

Yamashita, T. (Autor:in) / Matsuhata, H. (Autor:in) / Miyasaka, Y. (Autor:in) / Momose, K. (Autor:in) / Sato, T. (Autor:in) / Kitabatake, M. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.

Erschienen in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 374-377

MATERIALS SCIENCE FORUM ; 778/780

Erscheinungsdatum:

01.01.2014

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. et al. | British Library Online Contents | 2013

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer

Ishida, Y. / Yoshida, S. | British Library Online Contents | 2014

Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Yamashita, T. / Momose, K. / Muto, D. et al. | British Library Online Contents | 2012

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Chen, Y. / Balaji, R. / Dudley, M. et al. | British Library Online Contents | 2009

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