Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy: Fid-Bau Portal

Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Yamashita, T. / Momose, K. / Muto, D. / Shimodaira, Y. / Yamatake, K. / Miyasaka, Y. / Sato, T. / Matsuhata, H. / Kitabatake, M.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Yamashita, T. / Momose, K. / Muto, D. / Shimodaira, Y. / Yamatake, K. / Miyasaka, Y. / Sato, T. / Matsuhata, H. / Kitabatake, M.

Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Yamashita, T. / Momose, K. / Muto, D. / Shimodaira, Y. / Yamatake, K. / Miyasaka, Y. / Sato, T. / Matsuhata, H. / Kitabatake, M.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Dokumentinformationen

Titel:

Characterization of Triangular-Defects in 4^o Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy

Beteiligte:

Yamashita, T. (Autor:in) / Momose, K. (Autor:in) / Muto, D. (Autor:in) / Shimodaira, Y. (Autor:in) / Yamatake, K. (Autor:in) / Miyasaka, Y. (Autor:in) / Sato, T. (Autor:in) / Matsuhata, H. (Autor:in) / Kitabatake, M. (Autor:in)

Erschienen in:

MATERIALS SCIENCE FORUM ; 717/720 ; 363-366

Erscheinungsdatum:

01.01.2012

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. et al. | British Library Online Contents | 2013

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. et al. | British Library Online Contents | 2014

Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. et al. | British Library Online Contents | 2013

Defects characterization of welded specimens by transmission electron microscopy

Roy, A. K. / Chanda, S. / Ghosh, A. et al. | British Library Online Contents | 2007

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Chen, Y. / Balaji, R. / Dudley, M. et al. | British Library Online Contents | 2009

Nach oben