Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography: Fid-Bau Portal

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. / Momose, K. / Sato, T. / Kitabatake, M.

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Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. / Momose, K. / Sato, T. / Kitabatake, M.

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. / Momose, K. / Sato, T. / Kitabatake, M.

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Title:

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography

Contributors:

Yamashita, T. (author) / Matsuhata, H. (author) / Miyasaka, Y. (author) / Momose, K. (author) / Sato, T. (author) / Kitabatake, M. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 374-377

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Yamashita, T. / Matsuhata, H. / Miyasaka, Y. et al. | British Library Online Contents | 2013

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