C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance: Fid-Bau Portal

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Umeda, T. / Okamoto, M. / Arai, R. / Satoh, Y. / Kosugi, R. / Harada, S. / Okumura, H. / Makino, T. / Ohshima, T.

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C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Umeda, T. / Okamoto, M. / Arai, R. / Satoh, Y. / Kosugi, R. / Harada, S. / Okumura, H. / Makino, T. / Ohshima, T.

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Umeda, T. / Okamoto, M. / Arai, R. / Satoh, Y. / Kosugi, R. / Harada, S. / Okumura, H. / Makino, T. / Ohshima, T.

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Titel:

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Beteiligte:

Umeda, T. (Autor:in) / Okamoto, M. (Autor:in) / Arai, R. (Autor:in) / Satoh, Y. (Autor:in) / Kosugi, R. (Autor:in) / Harada, S. (Autor:in) / Okumura, H. (Autor:in) / Makino, T. (Autor:in) / Ohshima, T. (Autor:in) / Okumura, H.

Erschienen in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 414-417

MATERIALS SCIENCE FORUM ; 778/780

Erscheinungsdatum:

01.01.2014

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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