Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Microwave Annealing of Al^+ Implanted 4H-SiC: Towards Device Fabrication
Microwave Annealing of Al^+ Implanted 4H-SiC: Towards Device Fabrication
Microwave Annealing of Al^+ Implanted 4H-SiC: Towards Device Fabrication
Nath, A. (Autor:in) / Parisini, A. (Autor:in) / Tian, Y.L. (Autor:in) / Rao, M.V. (Autor:in) / Nipoti, R. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
British Library Online Contents | 2010
|Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing
British Library Online Contents | 2004
|Defect annealing in ion implanted silicon carbide
British Library Online Contents | 1997
|High temperature annealing of Er implanted GaN
British Library Online Contents | 2001
|Microstructural evolution upon annealing in Ar-implanted Si
British Library Online Contents | 2011
|