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Investigation of Trenched and High Temperature Annealed 4H-SiC
Investigation of Trenched and High Temperature Annealed 4H-SiC
Investigation of Trenched and High Temperature Annealed 4H-SiC
Banzhaf, C.T. (Autor:in) / Grieb, M. (Autor:in) / Trautmann, A. (Autor:in) / Bauer, A.J. (Autor:in) / Frey, L. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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