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Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
Akiyama, S. (Autor:in) / Katoh, K. (Autor:in) / Shimizu, H. (Autor:in) / Hatanaka, A. (Autor:in) / Ogawa, T. (Autor:in) / Yokoyama, N. (Autor:in) / Ishikawa, K. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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