Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors

Hinojosa, M. / Bayne, S. / Veliadis, V. et al. | British Library Online Contents | 2012

Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch

Friedrichs, P. / Elpelt, R. / Schorner, R. et al. | British Library Online Contents | 2004

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Veliadis, V. / McNutt, T. / McCoy, M. et al. | British Library Online Contents | 2009

Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Meyer, D. J. / Bohna, N. A. / Lenahan, P. M. et al. | British Library Online Contents | 2004

Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds

Puglisi, D. / Eriksson, J. / Bur, C. et al. | British Library Online Contents | 2014