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Effect of growth pressure on the characteristics of b-Ga2O3 films grown on GaAs (100) substrates by MOCVD method
Effect of growth pressure on the characteristics of b-Ga2O3 films grown on GaAs (100) substrates by MOCVD method
Effect of growth pressure on the characteristics of b-Ga2O3 films grown on GaAs (100) substrates by MOCVD method
APPLIED SURFACE SCIENCE ; 325 ; 258-261
01.01.2015
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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