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    Effect of growth pressure on the characteristics of b-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

    New search for: Chen, Y.
    New search for: Liang, H.
    New search for: Xia, X.
    New search for: shen, R.
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    New search for: Luo, Y.
    New search for: Du, G.

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    Effect of growth pressure on the characteristics of b-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

    New search for: Chen, Y.
    New search for: Liang, H.
    New search for: Xia, X.
    New search for: shen, R.
    New search for: Liu, Y.
    New search for: Luo, Y.
    New search for: Du, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of growth pressure on the characteristics of b-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

    New search for: Chen, Y.
    New search for: Liang, H.
    New search for: Xia, X.
    New search for: shen, R.
    New search for: Liu, Y.
    New search for: Luo, Y.
    New search for: Du, G.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Effect of growth pressure on the characteristics of b-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

    Contributors:

    Chen, Y. (author) / Liang, H. (author) / Xia, X. (author) / shen, R. (author) / Liu, Y. (author) / Luo, Y. (author) / Du, G. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 325 ; 258-261

    Publication date:

    2015-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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