Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies: Fid-Bau Portal

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

López-Escalante, M. C. / Gabás, M. / García, I. / Barrigón, E. / Rey-Stolle, I. / Algora, C. / Palanco, S. / Ramos-Barrado, J. R.

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Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

López-Escalante, M. C. / Gabás, M. / García, I. / Barrigón, E. / Rey-Stolle, I. / Algora, C. / Palanco, S. / Ramos-Barrado, J. R.

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

López-Escalante, M. C. / Gabás, M. / García, I. / Barrigón, E. / Rey-Stolle, I. / Algora, C. / Palanco, S. / Ramos-Barrado, J. R.

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Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Titel:

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Beteiligte:

López-Escalante, M. C. (Autor:in) / Gabás, M. (Autor:in) / García, I. (Autor:in) / Barrigón, E. (Autor:in) / Rey-Stolle, I. (Autor:in) / Algora, C. (Autor:in) / Palanco, S. (Autor:in) / Ramos-Barrado, J. R. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 360 ; 477-484

Erscheinungsdatum:

01.01.2016

Format / Umfang:

8 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

Arai, T. / Uchida, K. / Tokunaga, H. et al. | British Library Online Contents | 1995

Optical properties of gas source MBE grown AlInP on GaAs

Gu, Y. / Zhang, Y. G. / Li, A. Z. et al. | British Library Online Contents | 2007

Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy

Koizumi, A. / Fujiwara, Y. / Inoue, K. et al. | British Library Online Contents | 2003

Application of angle resolved X-ray photoelectron spectroscopy to the study of GaAs (001) surfaces and metal/GaAs (001) interfaces

Lepine, B. / Quemerais, A. / Jezequel, G. et al. | British Library Online Contents | 1994

Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces

Botha, J. R. / Leitch, A. W. R. | British Library Online Contents | 1994

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