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Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies
Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies
Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies
López-Escalante, M. C. (author) / Gabás, M. (author) / García, I. (author) / Barrigón, E. (author) / Rey-Stolle, I. (author) / Algora, C. (author) / Palanco, S. (author) / Ramos-Barrado, J. R. (author)
APPLIED SURFACE SCIENCE ; 360 ; 477-484
2016-01-01
8 pages
Article (Journal)
English
DDC:
621.35
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