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The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition
The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition
The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition
Chaibi, F. (Autor:in) / Jemai, R. (Autor:in) / Aguas, H. (Autor:in) / Khemakhem, H. (Autor:in) / Khirouni, K. (Autor:in)
JOURNAL OF MATERIALS SCIENCE ; 53 ; 3672-3681
01.01.2018
10 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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