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The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition
The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition
The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition
Chaibi, F. (author) / Jemai, R. (author) / Aguas, H. (author) / Khemakhem, H. (author) / Khirouni, K. (author)
JOURNAL OF MATERIALS SCIENCE ; 53 ; 3672-3681
2018-01-01
10 pages
Article (Journal)
English
DDC:
620.11
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