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Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
Omotoso, E. (author) / Meyer, W.E. (author) / Coelho, S.M.M. (author) / Diale, M. (author) / Ngoepe, P.N.M. (author) / Auret, F.D. (author)
Materials science in semiconductor processing ; 51 ; 20-24
2016-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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