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Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
Lee, Da Jung (Autor:in) / Lim, Jung Wook (Autor:in) / Mun, Jae Kyoung (Autor:in) / Yun, Sun Jin (Autor:in)
Materials research bulletin ; 83 ; 597-602
01.01.2016
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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