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    Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric

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    New search for: Lim, Jung Wook
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    Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric

    New search for: Lee, Da Jung
    New search for: Lim, Jung Wook
    New search for: Mun, Jae Kyoung
    New search for: Yun, Sun Jin

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric

    New search for: Lee, Da Jung
    New search for: Lim, Jung Wook
    New search for: Mun, Jae Kyoung
    New search for: Yun, Sun Jin

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric

    Contributors:

    Lee, Da Jung (author) / Lim, Jung Wook (author) / Mun, Jae Kyoung (author) / Yun, Sun Jin (author)

    Published in:

    Materials research bulletin ; 83 ; 597-602

    Publication date:

    2016-01-01

    Size:

    6 pages

    ISSN:

    0025-5408

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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