Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Fernández-Delgado, N. (Autor:in) / Herrera, M. (Autor:in) / Chisholm, M.F. (Autor:in) / Kamarudin, M.A. (Autor:in) / Zhuang, Q.D. (Autor:in) / Hayne, M. (Autor:in) / Molina, S.I. (Autor:in)
Applied surface science ; 395 ; 136-139
01.01.2017
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2017
|Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD
British Library Online Contents | 2004
|Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer
British Library Online Contents | 2011
|Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios
British Library Online Contents | 2012
|The effects of thermal annealing in self-assembled Ge/Si quantum dots
British Library Online Contents | 2007
|