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Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure
Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure
Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure
Chakrabarti, Somsubhra (Autor:in) / Panja, Rajeswar (Autor:in) / Roy, Sourav (Autor:in) / Roy, Anisha (Autor:in) / Samanta, Subhranu (Autor:in) / Dutta, Mrinmoy (Autor:in) / Ginnaram, Sreekanth (Autor:in) / Maikap, Siddheswar (Autor:in) / Cheng, Hsin-Ming (Autor:in) / Tsai, Ling-Na (Autor:in)
Applied surface science ; 433 ; 51-59
01.01.2018
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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