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Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma
Ham, Yong-Hyun (author) / Shutov, Dmitriy Alexandrovich (author) / Kwon, Kwang-Ho (author)
Applied surface science ; 273 ; 287-292
2013-01-01
6 pages
Article (Journal)
English
DDC:
620.44
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