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    Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring

    New search for: Egorov, K.V.
    New search for: Lebedinskii, Yu.Yu.
    New search for: Markeev, A.M.
    New search for: Orlov, O.M.

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    Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring

    New search for: Egorov, K.V.
    New search for: Lebedinskii, Yu.Yu.
    New search for: Markeev, A.M.
    New search for: Orlov, O.M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring

    New search for: Egorov, K.V.
    New search for: Lebedinskii, Yu.Yu.
    New search for: Markeev, A.M.
    New search for: Orlov, O.M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Full ALD Ta2O5-based stacks for resistive random access memory grown with in vacuo XPS monitoring

    Contributors:

    Egorov, K.V. (author) / Lebedinskii, Yu.Yu. (author) / Markeev, A.M. (author) / Orlov, O.M. (author)

    Published in:

    Applied surface science ; 356 ; 454-459

    Publication date:

    2015-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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