Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment
In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment
In-situ growth of HfO2 on clean 2H-MoS2 surface: Growth mode, interface reactions and energy band alignment
Chen, Chang Pang (Autor:in) / Ong, Bin Leong (Autor:in) / Ong, Sheau Wei (Autor:in) / Ong, Weijie (Autor:in) / Tan, Hui Ru (Autor:in) / Chai, Jian Wei (Autor:in) / Zhang, Zheng (Autor:in) / Wang, Shi Jie (Autor:in) / Pan, Ji Sheng (Autor:in) / Harrison, Leslie John (Autor:in)
Applied surface science ; 420 ; 523-534
01.01.2017
12 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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Energy band alignment of HfO2 on p-type (100)InP
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Band bending and band alignment at HfO2/HfSixOy/Si interfaces
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Growth and characterization of MOMBE grown HfO2
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Interface state energy distribution in (100)Si/HfO2
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