Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {101¯m} faceted surface
Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {101¯m} faceted surface
Structural characterization of InGaN multi-quantum-wells grown on high indium content InGaN template with {101¯m} faceted surface
Xue, Junjun (Autor:in) / Cai, Qing (Autor:in) / Zhang, Baohua (Autor:in) / Ge, Mei (Autor:in) / Chen, Dunjun (Autor:in) / Chen, Jiangwei (Autor:in) / Zhi, Ting (Autor:in) / Wang, Lianhui (Autor:in) / Zhang, Rong (Autor:in) / Zheng, Youdou (Autor:in)
MATERIALS LETTERS ; 208 ; 19-22
01.01.2017
4 pages
Aufsatz (Zeitschrift)
Unbekannt
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2006
|Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD
British Library Online Contents | 2001
|Optical properties of InGaN quantum wells
British Library Online Contents | 1999
|Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
British Library Online Contents | 2001
|The optical and structural properties of InGaN epilayers with very high indium content
British Library Online Contents | 1999
|