Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator
Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator
Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator
Jin, Hyun Soo (Autor:in) / Cho, Young Jin (Autor:in) / Lee, Sang-Moon (Autor:in) / Kim, Dae Hyun (Autor:in) / Kim, Dae Woong (Autor:in) / Lee, Dongsoo (Autor:in) / Park, Jong-Bong (Autor:in) / Won, Jeong Yeon (Autor:in) / Lee, Myoung-Jae (Autor:in) / Cho, Seong-Ho (Autor:in)
Applied surface science ; 315 ; 178-183
01.01.2014
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2014
|Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks
British Library Online Contents | 2018
|Hydrogen induced interface passivation in atomic layer deposited Al2O3 films and Al2O3/SiO2 stacks
British Library Online Contents | 2018
|British Library Online Contents | 2015
|British Library Online Contents | 2005
|