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Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator
Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator
Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator
Jin, Hyun Soo (author) / Cho, Young Jin (author) / Lee, Sang-Moon (author) / Kim, Dae Hyun (author) / Kim, Dae Woong (author) / Lee, Dongsoo (author) / Park, Jong-Bong (author) / Won, Jeong Yeon (author) / Lee, Myoung-Jae (author) / Cho, Seong-Ho (author)
Applied surface science ; 315 ; 178-183
2014-01-01
6 pages
Article (Journal)
English
DDC:
620.44
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