Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
Zhou, Shengjun (Autor:in) / Xu, Haohao (Autor:in) / Hu, Hongpo (Autor:in) / Gui, Chengqun (Autor:in) / Liu, Sheng (Autor:in)
Applied surface science ; 471 ; 231-238
01.01.2019
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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