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High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
Zhou, Shengjun (author) / Xu, Haohao (author) / Hu, Hongpo (author) / Gui, Chengqun (author) / Liu, Sheng (author)
Applied surface science ; 471 ; 231-238
2019-01-01
8 pages
Article (Journal)
English
DDC:
620.44
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