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Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
Fiorenza, P. (Autor:in) / Vivona, M. (Autor:in) / Di Franco, S. (Autor:in) / Smecca, E. (Autor:in) / Sanzaro, S. (Autor:in) / Alberti, A. (Autor:in) / Saggio, M. (Autor:in) / Roccaforte, F. (Autor:in)
Materials science in semiconductor processing ; 93 ; 290-294
01.01.2019
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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