Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering: Fid-Bau Portal

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Fiorenza, P. / Vivona, M. / Di Franco, S. / Smecca, E. / Sanzaro, S. / Alberti, A. / Saggio, M. / Roccaforte, F.

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Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Fiorenza, P. / Vivona, M. / Di Franco, S. / Smecca, E. / Sanzaro, S. / Alberti, A. / Saggio, M. / Roccaforte, F.

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Fiorenza, P. / Vivona, M. / Di Franco, S. / Smecca, E. / Sanzaro, S. / Alberti, A. / Saggio, M. / Roccaforte, F.

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Check availability in my library

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Document information

Title:

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Contributors:

Fiorenza, P. (author) / Vivona, M. (author) / Di Franco, S. (author) / Smecca, E. (author) / Sanzaro, S. (author) / Alberti, A. (author) / Saggio, M. (author) / Roccaforte, F. (author)

Published in:

Materials science in semiconductor processing ; 93 ; 290-294

Publication date:

2019-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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