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High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer
High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer
High crystal quality strained Si0.5Ge0.5 layer with a thickness of up to 50 nm grown on the three-layer SiGe strain relaxed buffer
Zhao, Zhiqian (author) / Li, Yongliang (author) / Gu, Shihai (author) / Zhang, Qingzhu (author) / Wang, Guilei (author) / Li, Junjie (author) / Li, Yan (author) / Xu, Gaobo (author) / Ma, Xueli (author) / Wang, Xiaolei (author)
Materials science in semiconductor processing ; 99 ; 159-164
2019-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
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