Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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High-thermal-conductivity Si3N4 ceramic and preparation method thereof
The invention relates to the field of ceramic technologies and electronic materials, in particular to high-thermal-conductivity Si3N4 ceramic and a preparation method thereof. The high-thermal-conductivity Si3N4 ceramic is prepared from 95-98 parts by weight of Si3N4 powder and 2-5 parts by weight of a sintering aid through pressure sintering and high-temperature annealing, and the sintering aid comprises 2-5 parts by weight of Mg2Si and 0-0.5 parts by weight of C. The problems of existing Si3N4 ceramic, including high strength but low heat conductivity or high heat conductivity but low strength, high sintering temperature, high annealing temperature, and too large adding amount of sintering aids, are solved. The compact Si3N4 ceramic with excellent mechanical properties can be prepared ata relatively low temperature. After annealing treatment, the thermal conductivity reaches up to 110W.M<-1>.K<-1>, the Vickers hardness can reach 16.2-17.8 GPa, the bending strength is as high as 753-846 MPa, and the fracture toughness is 8.61-9.57 MPa*m<1/2>.
本发明涉及陶瓷技术和电子材料领域，特别涉及一种高导热SiN陶瓷及其制备方法。高导热SiN陶瓷，按重量份计算，由95‑98份SiN粉和2‑5份烧结助剂经加压烧结和高温退火而成，所述烧结助剂包括2‑5份的MgSi和0‑0.5份的C。本发明解决现有SiN陶瓷强度高而热导率较低、热导率高而强度低、烧结温度高、退火温度高、烧结助剂添加量过多的问题。可以在较低的温度下制备出致密、力学性能优异的SiN陶瓷经过退火处理后热导率高达110W·m·K,维氏硬度可达16.2‑17.8GPa，抗弯强度高达753‑846MPa，断裂韧性为8.61‑9.57MPa·m。
High-thermal-conductivity Si3N4 ceramic and preparation method thereof
The invention relates to the field of ceramic technologies and electronic materials, in particular to high-thermal-conductivity Si3N4 ceramic and a preparation method thereof. The high-thermal-conductivity Si3N4 ceramic is prepared from 95-98 parts by weight of Si3N4 powder and 2-5 parts by weight of a sintering aid through pressure sintering and high-temperature annealing, and the sintering aid comprises 2-5 parts by weight of Mg2Si and 0-0.5 parts by weight of C. The problems of existing Si3N4 ceramic, including high strength but low heat conductivity or high heat conductivity but low strength, high sintering temperature, high annealing temperature, and too large adding amount of sintering aids, are solved. The compact Si3N4 ceramic with excellent mechanical properties can be prepared ata relatively low temperature. After annealing treatment, the thermal conductivity reaches up to 110W.M<-1>.K<-1>, the Vickers hardness can reach 16.2-17.8 GPa, the bending strength is as high as 753-846 MPa, and the fracture toughness is 8.61-9.57 MPa*m<1/2>.
本发明涉及陶瓷技术和电子材料领域，特别涉及一种高导热SiN陶瓷及其制备方法。高导热SiN陶瓷，按重量份计算，由95‑98份SiN粉和2‑5份烧结助剂经加压烧结和高温退火而成，所述烧结助剂包括2‑5份的MgSi和0‑0.5份的C。本发明解决现有SiN陶瓷强度高而热导率较低、热导率高而强度低、烧结温度高、退火温度高、烧结助剂添加量过多的问题。可以在较低的温度下制备出致密、力学性能优异的SiN陶瓷经过退火处理后热导率高达110W·m·K,维氏硬度可达16.2‑17.8GPa，抗弯强度高达753‑846MPa，断裂韧性为8.61‑9.57MPa·m。
High-thermal-conductivity Si3N4 ceramic and preparation method thereof
一种高导热SiN陶瓷及其制备方法
LI JUNGUO (Autor:in) / CHEN YANG (Autor:in) / SHEN QIANG (Autor:in) / LI MEIJUAN (Autor:in)
16.06.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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