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High-performance Si3N4 ceramic substrate and preparation method thereof
The invention discloses a high-performance Si3N4 ceramic substrate and a preparation method thereof, and relates to the technical field of silicon nitride ceramics. According to the preparation method provided by the invention, non-oxide Gd3Si2C2 powder and beta-Si3N4 seed crystals are added into raw materials of the Si3N4 ceramic, on one hand, introduction of oxygen content is reduced from the raw materials, Gd3Si2C2 can react with oxygen impurities such as a SiO2 oxidation film on the surface of the Si3N4 powder, the N/O ratio of a liquid phase in the sintering process is increased, O atoms are prevented from being dissolved into Si3N4 crystal lattices in a solid mode, crystal lattice oxygen is reduced, and further, the performance of the Si3N4 ceramic is improved. The Gd3Si2C2 can effectively refine Si3N4 crystal grains and increase the length-diameter ratio of the crystal grains, so that the bending strength and the fracture toughness of the Si3N4 ceramic are improved; the added beta-Si3N4 seed crystal can provide a crystal nucleus for crystallization of beta-Si3N4 crystal grains, promote growth of the crystal grains and gradually extrude a grain boundary phase into a polycrystal junction, so that the heat conductivity of the Si3N4 ceramic is improved by adjusting the grain boundary phase. The finally prepared Si3N4 ceramic has the outstanding advantages of high thermal conductivity, high strength, high toughness and the like.
本发明公开了一种高性能Si3N4陶瓷基板及其制备方法，涉及氮化硅陶瓷技术领域。本发明提供的制备方法在Si3N4陶瓷的原料中添加非氧化物Gd3Si2C2粉体和β‑Si3N4晶种，一方面，从原料上减少氧含量的引入，同时Gd3Si2C2能够与Si3N4粉体表面的SiO2氧化膜等氧杂质反应，提高烧结过程中液相的N/O比，阻碍O原子固溶进Si3N4晶格，降低晶格氧，进一步地，Gd3Si2C2能有效的细化Si3N4晶粒，增加晶粒的长径比，从而提高Si3N4陶瓷的弯曲强度和断裂韧性；加入的β‑Si3N4晶种，能够为β‑Si3N4晶粒的结晶提供晶核，促进晶粒长大，将晶界相逐渐排挤进入多晶交界处，从而调节晶界相来提高Si3N4陶瓷的热导率。最终制得的Si3N4陶瓷具有高热导、高强度、高韧性等突出优点。
High-performance Si3N4 ceramic substrate and preparation method thereof
The invention discloses a high-performance Si3N4 ceramic substrate and a preparation method thereof, and relates to the technical field of silicon nitride ceramics. According to the preparation method provided by the invention, non-oxide Gd3Si2C2 powder and beta-Si3N4 seed crystals are added into raw materials of the Si3N4 ceramic, on one hand, introduction of oxygen content is reduced from the raw materials, Gd3Si2C2 can react with oxygen impurities such as a SiO2 oxidation film on the surface of the Si3N4 powder, the N/O ratio of a liquid phase in the sintering process is increased, O atoms are prevented from being dissolved into Si3N4 crystal lattices in a solid mode, crystal lattice oxygen is reduced, and further, the performance of the Si3N4 ceramic is improved. The Gd3Si2C2 can effectively refine Si3N4 crystal grains and increase the length-diameter ratio of the crystal grains, so that the bending strength and the fracture toughness of the Si3N4 ceramic are improved; the added beta-Si3N4 seed crystal can provide a crystal nucleus for crystallization of beta-Si3N4 crystal grains, promote growth of the crystal grains and gradually extrude a grain boundary phase into a polycrystal junction, so that the heat conductivity of the Si3N4 ceramic is improved by adjusting the grain boundary phase. The finally prepared Si3N4 ceramic has the outstanding advantages of high thermal conductivity, high strength, high toughness and the like.
本发明公开了一种高性能Si3N4陶瓷基板及其制备方法，涉及氮化硅陶瓷技术领域。本发明提供的制备方法在Si3N4陶瓷的原料中添加非氧化物Gd3Si2C2粉体和β‑Si3N4晶种，一方面，从原料上减少氧含量的引入，同时Gd3Si2C2能够与Si3N4粉体表面的SiO2氧化膜等氧杂质反应，提高烧结过程中液相的N/O比，阻碍O原子固溶进Si3N4晶格，降低晶格氧，进一步地，Gd3Si2C2能有效的细化Si3N4晶粒，增加晶粒的长径比，从而提高Si3N4陶瓷的弯曲强度和断裂韧性；加入的β‑Si3N4晶种，能够为β‑Si3N4晶粒的结晶提供晶核，促进晶粒长大，将晶界相逐渐排挤进入多晶交界处，从而调节晶界相来提高Si3N4陶瓷的热导率。最终制得的Si3N4陶瓷具有高热导、高强度、高韧性等突出优点。
High-performance Si3N4 ceramic substrate and preparation method thereof
一种高性能Si3N4陶瓷基板及其制备方法
WU SHANGHUA (Autor:in) / CHEN XUANZHI (Autor:in) / LI YEHUA (Autor:in) / WU HAIDONG (Autor:in)
26.07.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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