Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The invention discloses a silicon nitride substrate material prepared based on a hot- pressing sintering method. The silicon nitride substrate material prepared based on the hot-pressing sintering method is prepared by the following steps: taking silicon nitride (Si3N4), silicon magnesium nitride (MgSiN2) and a sintering aid as raw materials; the silicon nitride substrate material prepared based on the hot-pressing sintering method is prepared by the following steps: uniformly mixing the silicon nitride (Si3N4), the silicon magnesium nitride (MgSiN2) and the sintering aid; adding solvent absolute ethyl alcohol and stirring and grinding for 40 to 60 hours to obtain uniformly mixed slurry; drying the mixed slurry at the temperature of 100-120 DEG C and sieving through a 40-200-mesh sieve toobtain silicon nitride substrate formula powder, performing dry pressing forming on the silicon nitride substrate formula powder, and performing hot-pressing sintering for 1-3 h at the temperature of1700-1850 DEG C under the pressure of 20-45 MPa in an inert or a reducing atmosphere to obtain the silicon nitride substrate. Compared with the prior art, by optimizing the formula and technological parameters, the size of silicon nitride grains and the thickness of grain boundaries are effectively controlled, and finally the high-strength and high-thermal-conductivity silicon nitride substrate material which can be widely applied to the field of dynamic IGBTs is obtained.
本发明公开了一种基于热压烧结法制备的氮化硅基片材料，所述基于热压烧结法制备的氮化硅基片材料是以氮化硅(SiN)、氮化硅镁(MgSiN)、助烧剂为原料，所述基于热压烧结法制备的氮化硅基片材料是将氮化硅(SiN)、氮化硅镁(MgSiN)、助烧剂混合均匀，加入溶剂无水乙醇经搅拌研磨40‑60小时得到混合均匀的浆料，混合浆料经100‑120℃烘干、过40‑200目筛得到氮化硅基片配方粉，所述氮化硅基片配方粉经干压成型后，在惰性或还原性气氛下，在20‑45MPa的压力下、1700‑1850℃下热压烧结1‑3小时制得。与现有技术相比，本发明通过优化配方和工艺参数，从而有效地控制氮化硅晶粒的大小和晶界的厚薄，最终得到可广泛应用于动态IGBT领域的高强高热导氮化硅基片材料。
The invention discloses a silicon nitride substrate material prepared based on a hot- pressing sintering method. The silicon nitride substrate material prepared based on the hot-pressing sintering method is prepared by the following steps: taking silicon nitride (Si3N4), silicon magnesium nitride (MgSiN2) and a sintering aid as raw materials; the silicon nitride substrate material prepared based on the hot-pressing sintering method is prepared by the following steps: uniformly mixing the silicon nitride (Si3N4), the silicon magnesium nitride (MgSiN2) and the sintering aid; adding solvent absolute ethyl alcohol and stirring and grinding for 40 to 60 hours to obtain uniformly mixed slurry; drying the mixed slurry at the temperature of 100-120 DEG C and sieving through a 40-200-mesh sieve toobtain silicon nitride substrate formula powder, performing dry pressing forming on the silicon nitride substrate formula powder, and performing hot-pressing sintering for 1-3 h at the temperature of1700-1850 DEG C under the pressure of 20-45 MPa in an inert or a reducing atmosphere to obtain the silicon nitride substrate. Compared with the prior art, by optimizing the formula and technological parameters, the size of silicon nitride grains and the thickness of grain boundaries are effectively controlled, and finally the high-strength and high-thermal-conductivity silicon nitride substrate material which can be widely applied to the field of dynamic IGBTs is obtained.
本发明公开了一种基于热压烧结法制备的氮化硅基片材料，所述基于热压烧结法制备的氮化硅基片材料是以氮化硅(SiN)、氮化硅镁(MgSiN)、助烧剂为原料，所述基于热压烧结法制备的氮化硅基片材料是将氮化硅(SiN)、氮化硅镁(MgSiN)、助烧剂混合均匀，加入溶剂无水乙醇经搅拌研磨40‑60小时得到混合均匀的浆料，混合浆料经100‑120℃烘干、过40‑200目筛得到氮化硅基片配方粉，所述氮化硅基片配方粉经干压成型后，在惰性或还原性气氛下，在20‑45MPa的压力下、1700‑1850℃下热压烧结1‑3小时制得。与现有技术相比，本发明通过优化配方和工艺参数，从而有效地控制氮化硅晶粒的大小和晶界的厚薄，最终得到可广泛应用于动态IGBT领域的高强高热导氮化硅基片材料。
Silicon nitride substrate material prepared based on hot -pressing sintering method
一种基于热压烧结法制备的氮化硅基片材料
QU YOUFU (Autor:in)
04.09.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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