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MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
This member for use in a plasma treatment device is provided with a substrate, and, on at least part of the substrate, a film of an oxide of a rare earth element. The film thickness has a coefficientof variation of less than or equal to 0.04. This plasma treatment device is provided with the aforementioned member for use in a plasma treatment device. The member for use in a plasma treatment device has low film thickness variability.
本发明的等离子体处理装置用构件,具备基材和在该基材的至少一部分上的稀土类元素的氧化物的膜。该膜中,厚度的变异系数为0.04以下。本发明的等离子体处理装置,具备上述等离子体处理装置用构件。本发明的等离子体处理装置用构件,膜的厚度的偏差少。
MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
This member for use in a plasma treatment device is provided with a substrate, and, on at least part of the substrate, a film of an oxide of a rare earth element. The film thickness has a coefficientof variation of less than or equal to 0.04. This plasma treatment device is provided with the aforementioned member for use in a plasma treatment device. The member for use in a plasma treatment device has low film thickness variability.
本发明的等离子体处理装置用构件,具备基材和在该基材的至少一部分上的稀土类元素的氧化物的膜。该膜中,厚度的变异系数为0.04以下。本发明的等离子体处理装置,具备上述等离子体处理装置用构件。本发明的等离子体处理装置用构件,膜的厚度的偏差少。
MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
等离子体处理装置用构件和具备它的等离子体处理装置
ISHIKAWA KAZUHIRO (author) / HINO TAKASHI (author) / SAITO SHUICHI (author)
2020-09-25
Patent
Electronic Resource
Chinese
MEMBER FOR USE IN PLASMA TREATMENT DEVICE, AND PLASMA TREATMENT DEVICE PROVIDED THEREWITH
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