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Method for sintering and welding box dam on silicon nitride ceramic substrate
The invention discloses a method for sintering and welding a box dam on a silicon nitride ceramic substrate. The method comprises the following steps: step one, printing a metal circuit coating on a silicon nitride ceramic substrate by a thick film printing technology, wherein the shape of the metal circuit coating is matched with the shape of a box dam to be welded on silicon nitride ceramic; step two, placing alloy solder on the metal circuit coating on the silicon nitride ceramic substrate, and then printing or placing the box dam on the silicon nitride ceramic substrate, wherein the alloysolder is arranged between the box dam and the metal circuit coating, and the box dam corresponds to the metal circuit coating in shape; step three, putting the silicon nitride ceramic substrate and the box dam into a sintering device; step four, introducing a protective atmosphere into the sintering device; step five, starting the sintering device to carry out sintering at a temperature of 150 DEG C to 1500 DEG C; and step six, completing the sintering. The box dam is welded on silicon nitride ceramic in a sintering welding mode, compared with magnetron sputtering in the prior art, the operation is more convenient, and the cost is lower.
本发明公开了一种氮化硅陶瓷基板上围坝的烧结焊接方法,包括如下步骤:第一步,将氮化硅陶瓷基板通过厚膜印刷技术印刷出金属线路涂层,该金属线路涂层形状与需要焊接到氮化硅陶瓷上的围坝的形状适配;第二步,在氮化硅陶瓷基板的金属线路涂层上放置合金焊料,再将围坝隔着合金焊料印刷或放置到氮化硅陶瓷基板上,围坝与金属线路涂层的形状对应;第三步,将氮化硅陶瓷基板和围坝放入到烧结装置中;第四步,向烧结装置中冲入保护气氛;第五步,启动烧结装置进行烧结,且烧结的温度为150℃‑1500℃;第六步,烧结完成。本发明针对氮化硅陶瓷的围坝焊接采用烧结焊接的方式进行焊接,相对于现有技术中采用磁控溅射,更加方便操作,成本更低。
Method for sintering and welding box dam on silicon nitride ceramic substrate
The invention discloses a method for sintering and welding a box dam on a silicon nitride ceramic substrate. The method comprises the following steps: step one, printing a metal circuit coating on a silicon nitride ceramic substrate by a thick film printing technology, wherein the shape of the metal circuit coating is matched with the shape of a box dam to be welded on silicon nitride ceramic; step two, placing alloy solder on the metal circuit coating on the silicon nitride ceramic substrate, and then printing or placing the box dam on the silicon nitride ceramic substrate, wherein the alloysolder is arranged between the box dam and the metal circuit coating, and the box dam corresponds to the metal circuit coating in shape; step three, putting the silicon nitride ceramic substrate and the box dam into a sintering device; step four, introducing a protective atmosphere into the sintering device; step five, starting the sintering device to carry out sintering at a temperature of 150 DEG C to 1500 DEG C; and step six, completing the sintering. The box dam is welded on silicon nitride ceramic in a sintering welding mode, compared with magnetron sputtering in the prior art, the operation is more convenient, and the cost is lower.
本发明公开了一种氮化硅陶瓷基板上围坝的烧结焊接方法,包括如下步骤:第一步,将氮化硅陶瓷基板通过厚膜印刷技术印刷出金属线路涂层,该金属线路涂层形状与需要焊接到氮化硅陶瓷上的围坝的形状适配;第二步,在氮化硅陶瓷基板的金属线路涂层上放置合金焊料,再将围坝隔着合金焊料印刷或放置到氮化硅陶瓷基板上,围坝与金属线路涂层的形状对应;第三步,将氮化硅陶瓷基板和围坝放入到烧结装置中;第四步,向烧结装置中冲入保护气氛;第五步,启动烧结装置进行烧结,且烧结的温度为150℃‑1500℃;第六步,烧结完成。本发明针对氮化硅陶瓷的围坝焊接采用烧结焊接的方式进行焊接,相对于现有技术中采用磁控溅射,更加方便操作,成本更低。
Method for sintering and welding box dam on silicon nitride ceramic substrate
氮化硅陶瓷基板上围坝的烧结焊接方法
ZHOU KONGLI (Autor:in)
20.10.2020
Patent
Elektronische Ressource
Chinesisch
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