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Method for sintering and welding box dam on silicon nitride ceramic substrate
The invention discloses a method for sintering and welding a box dam on a silicon nitride ceramic substrate. The method comprises the following steps: step one, printing a metal circuit coating on a silicon nitride ceramic substrate by a thick film printing technology, wherein the shape of the metal circuit coating is matched with the shape of a box dam to be welded on silicon nitride ceramic; step two, placing the silicon nitride ceramic substrate and the box dam in a sintering and welding device; step three, placing alloy solder on the metal circuit coating on the silicon nitride ceramic substrate, and then printing or placing the box dam on the silicon nitride ceramic substrate, wherein the alloy solder is arranged between the box dam and the metal circuit coating, and the box dam corresponds to the metal circuit coating in shape; step four, starting the sintering and welding device to carry out welding at a temperature of 150 DEG C to 1500 DEG C; and step five, completing the welding. The box dam is welded on silicon nitride ceramic in a sintering welding mode, compared with magnetron sputtering in the prior art, the operation is more convenient, and the cost is lower.
本发明公开了一种氮化铝陶瓷基板上围坝的烧结焊接方法,包括如下步骤:第一步,将氮化铝陶瓷基板通过厚膜印刷技术印刷出金属线路涂层,该金属线路涂层形状与需要焊接到氮化铝陶瓷基板上的围坝的形状适配;第二步,将所述氮化铝陶瓷基板和所述围坝放入到烧结焊接装置中;第三步,在所述氮化铝陶瓷基板的金属线路涂层上放置合金焊料,再将所述围坝隔着所述合金焊料印刷或放置到所述氮化铝陶瓷基板上,所述围坝与所述金属线路涂层的形状对应;第四步,启动所述烧结焊接装置进行焊接,且焊接的温度为150℃‑1500℃;第五步,焊接完成。本发明针对氮化铝陶瓷的围坝焊接采用烧结焊接的方式进行焊接,相对于现有技术中采用磁控溅射,更加方便操作,成本更低。
Method for sintering and welding box dam on silicon nitride ceramic substrate
The invention discloses a method for sintering and welding a box dam on a silicon nitride ceramic substrate. The method comprises the following steps: step one, printing a metal circuit coating on a silicon nitride ceramic substrate by a thick film printing technology, wherein the shape of the metal circuit coating is matched with the shape of a box dam to be welded on silicon nitride ceramic; step two, placing the silicon nitride ceramic substrate and the box dam in a sintering and welding device; step three, placing alloy solder on the metal circuit coating on the silicon nitride ceramic substrate, and then printing or placing the box dam on the silicon nitride ceramic substrate, wherein the alloy solder is arranged between the box dam and the metal circuit coating, and the box dam corresponds to the metal circuit coating in shape; step four, starting the sintering and welding device to carry out welding at a temperature of 150 DEG C to 1500 DEG C; and step five, completing the welding. The box dam is welded on silicon nitride ceramic in a sintering welding mode, compared with magnetron sputtering in the prior art, the operation is more convenient, and the cost is lower.
本发明公开了一种氮化铝陶瓷基板上围坝的烧结焊接方法,包括如下步骤:第一步,将氮化铝陶瓷基板通过厚膜印刷技术印刷出金属线路涂层,该金属线路涂层形状与需要焊接到氮化铝陶瓷基板上的围坝的形状适配;第二步,将所述氮化铝陶瓷基板和所述围坝放入到烧结焊接装置中;第三步,在所述氮化铝陶瓷基板的金属线路涂层上放置合金焊料,再将所述围坝隔着所述合金焊料印刷或放置到所述氮化铝陶瓷基板上,所述围坝与所述金属线路涂层的形状对应;第四步,启动所述烧结焊接装置进行焊接,且焊接的温度为150℃‑1500℃;第五步,焊接完成。本发明针对氮化铝陶瓷的围坝焊接采用烧结焊接的方式进行焊接,相对于现有技术中采用磁控溅射,更加方便操作,成本更低。
Method for sintering and welding box dam on silicon nitride ceramic substrate
氮化铝陶瓷基板上围坝的烧结焊接方法
ZHOU KONGLI (Autor:in)
20.10.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Method for sintering and welding box dam on silicon nitride ceramic substrate
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